TY - GEN
T1 - Direct bonding of SiC by the suface activated bonding method
AU - Suga, Tadatomo
AU - Mu, Fengwen
AU - Fujino, Masahisa
AU - Takahashi, Yoshikazu
AU - Nakazawa, Haruo
AU - Iguchi, Kenichi
PY - 2014/1/1
Y1 - 2014/1/1
N2 - 3-inch 4H-SiC wafer direct bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. Moreover, the interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface.
AB - 3-inch 4H-SiC wafer direct bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. Moreover, the interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface.
KW - 4H-sic
KW - Bonding strength
KW - Interface
KW - Modified sab method
KW - Room temperature bonding
UR - http://www.scopus.com/inward/record.url?scp=84903732163&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84903732163&partnerID=8YFLogxK
U2 - 10.1109/ICEP.2014.6826707
DO - 10.1109/ICEP.2014.6826707
M3 - Conference contribution
AN - SCOPUS:84903732163
SN - 9784904090107
T3 - 2014 International Conference on Electronics Packaging, ICEP 2014
SP - 341
EP - 344
BT - 2014 International Conference on Electronics Packaging, ICEP 2014
PB - IEEE Computer Society
T2 - 2014 International Conference on Electronics Packaging, ICEP 2014
Y2 - 23 April 2014 through 25 April 2014
ER -