Direct formation of continuous multilayer graphene films with controllable thickness on dielectric substrates

Sachie Akiba; Masaki Kosaka; Kei Ohashi; Kei Hasegawa; Hisashi Sugime; Suguru Noda

doi:10.1016/j.tsf.2019.02.035

Direct formation of continuous multilayer graphene films with controllable thickness on dielectric substrates

Sachie Akiba, Masaki Kosaka, Kei Ohashi, Kei Hasegawa, Hisashi Sugime, Suguru Noda^*

^*この研究の対応する著者

研究成果: Article › 査読

5 被引用数 (Scopus)

抄録

Direct formation of graphene films on dielectric substrates is investigated by the “etching-precipitation” method which converts metal-carbon mixed films to graphene films by etching metal away by Cl ₂ at 600–650 °C. Here we report a new approach for improved control of the layer number and continuity of the graphene films. Reactive sputtering of Fe in C ₂ H ₄ /Ar enabled fine control of the carbon concentrations and thicknesses of the initial Fe-C films, which yielded continuous multilayer graphene films of controllable average layer numbers of ~10–40, low resistivity down to ~240 μΩ cm, and high Raman G-band to D-band intensity ratio up to 16 directly on SiO ₂ substrates. We also show that the carbon concentration of the initial Fe-C films determines the film continuity and crystallinity of the graphene.

本文言語	English
ページ（範囲）	136-142
ページ数	7
ジャーナル	Thin Solid Films
巻	675
DOI	https://doi.org/10.1016/j.tsf.2019.02.035
出版ステータス	Published - 2019 4月 1

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
表面および界面
表面、皮膜および薄膜
金属および合金
材料化学

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10.1016/j.tsf.2019.02.035

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title = "Direct formation of continuous multilayer graphene films with controllable thickness on dielectric substrates",

abstract = " Direct formation of graphene films on dielectric substrates is investigated by the “etching-precipitation” method which converts metal-carbon mixed films to graphene films by etching metal away by Cl 2 at 600–650 °C. Here we report a new approach for improved control of the layer number and continuity of the graphene films. Reactive sputtering of Fe in C 2 H 4 /Ar enabled fine control of the carbon concentrations and thicknesses of the initial Fe-C films, which yielded continuous multilayer graphene films of controllable average layer numbers of ~10–40, low resistivity down to ~240 μΩ cm, and high Raman G-band to D-band intensity ratio up to 16 directly on SiO 2 substrates. We also show that the carbon concentration of the initial Fe-C films determines the film continuity and crystallinity of the graphene. ",

keywords = "Continuous films, Direct formation on substrate, Layer number control, Multilayer graphene, Transfer-free deposition",

author = "Sachie Akiba and Masaki Kosaka and Kei Ohashi and Kei Hasegawa and Hisashi Sugime and Suguru Noda",

note = "Funding Information: This work was financially supported by a Grant-in-Aid for Scientific Research on Innovative Areas (No. JP25107002 ) from MEXT, Japan. Publisher Copyright: {\textcopyright} 2019 Elsevier B.V. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",

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doi = "10.1016/j.tsf.2019.02.035",

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AU - Akiba, Sachie

AU - Kosaka, Masaki

AU - Ohashi, Kei

AU - Hasegawa, Kei

AU - Sugime, Hisashi

AU - Noda, Suguru

N1 - Funding Information: This work was financially supported by a Grant-in-Aid for Scientific Research on Innovative Areas (No. JP25107002 ) from MEXT, Japan. Publisher Copyright: © 2019 Elsevier B.V. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - Direct formation of graphene films on dielectric substrates is investigated by the “etching-precipitation” method which converts metal-carbon mixed films to graphene films by etching metal away by Cl 2 at 600–650 °C. Here we report a new approach for improved control of the layer number and continuity of the graphene films. Reactive sputtering of Fe in C 2 H 4 /Ar enabled fine control of the carbon concentrations and thicknesses of the initial Fe-C films, which yielded continuous multilayer graphene films of controllable average layer numbers of ~10–40, low resistivity down to ~240 μΩ cm, and high Raman G-band to D-band intensity ratio up to 16 directly on SiO 2 substrates. We also show that the carbon concentration of the initial Fe-C films determines the film continuity and crystallinity of the graphene.

AB - Direct formation of graphene films on dielectric substrates is investigated by the “etching-precipitation” method which converts metal-carbon mixed films to graphene films by etching metal away by Cl 2 at 600–650 °C. Here we report a new approach for improved control of the layer number and continuity of the graphene films. Reactive sputtering of Fe in C 2 H 4 /Ar enabled fine control of the carbon concentrations and thicknesses of the initial Fe-C films, which yielded continuous multilayer graphene films of controllable average layer numbers of ~10–40, low resistivity down to ~240 μΩ cm, and high Raman G-band to D-band intensity ratio up to 16 directly on SiO 2 substrates. We also show that the carbon concentration of the initial Fe-C films determines the film continuity and crystallinity of the graphene.

KW - Continuous films

KW - Direct formation on substrate

KW - Layer number control

KW - Multilayer graphene

KW - Transfer-free deposition

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SN - 0040-6090

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SP - 136

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JO - Thin Solid Films

JF - Thin Solid Films

ER -

Direct formation of continuous multilayer graphene films with controllable thickness on dielectric substrates

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ASJC Scopus subject areas

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