Direct observation of picosecond spin relaxation of excitons in GaAs/AlGaAs quantum wells using spin-dependent optical nonlinearity

Atsushi Tackeuchi; Shunichi Muto; Tsuguo Inata; Toshio Fujii

doi:10.1063/1.102970

Direct observation of picosecond spin relaxation of excitons in GaAs/AlGaAs quantum wells using spin-dependent optical nonlinearity

Atsushi Tackeuchi^*, Shunichi Muto, Tsuguo Inata, Toshio Fujii

^*この研究の対応する著者

研究成果: Article › 査読

122 被引用数 (Scopus)

抄録

We have directly observed spin relaxation of excitons in the picosecond region using time-resolved polarization absorption measurements. With the help of spin-dependent optical nonlinearity of excitonic absorption, we obtained a fast decay of spin-up carriers and a fast accumulation of spin-down carriers with a spin relaxation time of 32 ps for a GaAs/Al_0.51Ga _0.49As multiple quantum well at room temperature with a time resolution of 1 ps.

本文言語	English
ページ（範囲）	2213-2215
ページ数	3
ジャーナル	Applied Physics Letters
巻	56
号	22
DOI	https://doi.org/10.1063/1.102970
出版ステータス	Published - 1990
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.102970

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引用スタイル

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abstract = "We have directly observed spin relaxation of excitons in the picosecond region using time-resolved polarization absorption measurements. With the help of spin-dependent optical nonlinearity of excitonic absorption, we obtained a fast decay of spin-up carriers and a fast accumulation of spin-down carriers with a spin relaxation time of 32 ps for a GaAs/Al0.51Ga 0.49As multiple quantum well at room temperature with a time resolution of 1 ps.",

author = "Atsushi Tackeuchi and Shunichi Muto and Tsuguo Inata and Toshio Fujii",

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AU - Tackeuchi, Atsushi

AU - Muto, Shunichi

AU - Inata, Tsuguo

AU - Fujii, Toshio

PY - 1990

Y1 - 1990

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AB - We have directly observed spin relaxation of excitons in the picosecond region using time-resolved polarization absorption measurements. With the help of spin-dependent optical nonlinearity of excitonic absorption, we obtained a fast decay of spin-up carriers and a fast accumulation of spin-down carriers with a spin relaxation time of 32 ps for a GaAs/Al0.51Ga 0.49As multiple quantum well at room temperature with a time resolution of 1 ps.

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