Doping-dependent evolution of the electronic structure of La2-xSrxCuO4 in the superconducting and metallic phases

C. Kim, M. Nakamura, T. Yoshida, T. Mizokawa, A. Fujimori, Z. X. Shen, T. Kakeshita, H. Eisaki, S. Uchida, A. Ino

研究成果: Article査読

315 被引用数 (Scopus)


The electronic structure of the La2-xSrxCuO4 (LSCO) system has been studied by angle-resolved photo-emission spectroscopy (ARPES). We report on the evolution of the Fermi surface, the superconducting gap, and the band dispersion around the extended saddle point k = (π,0) with hole doping in the superconducting and metallic phases. As hole concentration x decreases, the flat band at (π,0) moves from above the Fermi level (EF) for x>0.2 to below EF for x<0.2, and is further lowered down to x = 0.05. From the leading-edge shift of ARPES spectra, the magnitude of the superconducting gap around (π,0) is found to monotonically increase as x decreases from x = 0.30 down to x = 0.05 even though Tc decreases in the underdoped region, and the superconducting gap appears to smoothly evolve into the normal-state gap at x = 0.05. It is shown that the energy scales characterizing these low-energy structures have similar doping dependences. For the heavily overdoped sample (x = 0.30), the band dispersion and the ARPES spectral line shape are analyzed using a simple phenomenological self-energy form, and the electronic effective mass enhancement factor m*/mb≃2 has been found. As the hole concentration decreases, an incoherent component that cannot be described within the simple self-energy analysis grows intense in the high-energy tail of the ARPES peak. Some unusual features of the electronic structure observed for the underdoped region (x≤0.10) are consistent with numerical works on the stripe model.

ジャーナルPhysical Review B - Condensed Matter and Materials Physics
出版ステータスPublished - 2002 3月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学


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