A new liftoff method is proposed in which the film to be lifted-off is deposited on a molybdenum pattern. After the deposition, liftoff is done by thermally oxidizing the molybdenum and sublimating the molybdenum oxide. One micro meter thick sputter-deposited silicon dioxide was successfully delineated by this dry liftoff method. Dry liftoff is possible in an oxygen ambient at a temperature of 700 degree C or higher. The rate at which the molybdenum underneath the silicon dioxide is removed increases with the oxidation temperature and is typically 30 mu m/min at 900 degree C.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 1983 1月 1|
ASJC Scopus subject areas