TY - JOUR
T1 - DRY LIFTOFF METHOD BY SUBLIMATION OF MOLYBDENUM OXIDE.
AU - Yamauchi, Noriyoshi
AU - Yachi, Toshiaki
AU - Wada, Tsutomu
PY - 1983/1/1
Y1 - 1983/1/1
N2 - A new liftoff method is proposed in which the film to be lifted-off is deposited on a molybdenum pattern. After the deposition, liftoff is done by thermally oxidizing the molybdenum and sublimating the molybdenum oxide. One micro meter thick sputter-deposited silicon dioxide was successfully delineated by this dry liftoff method. Dry liftoff is possible in an oxygen ambient at a temperature of 700 degree C or higher. The rate at which the molybdenum underneath the silicon dioxide is removed increases with the oxidation temperature and is typically 30 mu m/min at 900 degree C.
AB - A new liftoff method is proposed in which the film to be lifted-off is deposited on a molybdenum pattern. After the deposition, liftoff is done by thermally oxidizing the molybdenum and sublimating the molybdenum oxide. One micro meter thick sputter-deposited silicon dioxide was successfully delineated by this dry liftoff method. Dry liftoff is possible in an oxygen ambient at a temperature of 700 degree C or higher. The rate at which the molybdenum underneath the silicon dioxide is removed increases with the oxidation temperature and is typically 30 mu m/min at 900 degree C.
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U2 - 10.1143/jjap.22.l595
DO - 10.1143/jjap.22.l595
M3 - Article
AN - SCOPUS:0020811315
SN - 0021-4922
VL - 22
SP - 595
EP - 596
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 9
ER -