抄録
The dynamic process of Si crystal growth on a Si(111)7×7 surface was studied in situ using high-temperature scanning tunneling microscopy. Si was evaporated onto a Si(111)7×7 surface, kept at 350°C, and the crystal growth was observed. The step-flow growth was observed as the appearance of new adatoms at the step edge. The [112] steps became jagged with [112] steps. At the [112] steps, new adatoms appeared in rows along the step edges.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1943-1946 |
| ページ数 | 4 |
| ジャーナル | Physical Review B |
| 巻 | 48 |
| 号 | 3 |
| DOI | |
| 出版ステータス | Published - 1993 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 凝縮系物理学