Effect of atomic layer deposition temperature on current conduction in Al₂O₃ films formed using H₂O oxidant

Physics & Astronomy

• atomic layer epitaxy 100%
• capacitors 83%
• conduction 63%
• leakage 29%
• temperature 28%
• electron affinity 27%
• dipoles 26%
• blisters 16%
• shift 14%
• MIS (semiconductors) 13%
• semiconductor devices 12%
• insulation 11%
• passivity 11%
• field emission 10%
• space charge 10%
• permittivity 8%
• oxides 7%
• causes 7%
• electric potential 6%
• performance 5%