Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition

H. Kato; K. S. Seol; T. Toyoda; Y. Ohki

Effect of ozone annealing on the charge trapping property of Ta₂O₅-Si₃N₄-p-Si capacitor grown by low pressure chemical vapor deposition

H. Kato^*, K. S. Seol, T. Toyoda, Y. Ohki

^*この研究の対応する著者

先進理工学部

研究成果: Paper › 査読

抄録

The effects of ozone annealing on the charge trapping property of TaO films grown on Si₃N₄ barrier layers by low pressure CVD are investigated. The ozone annealing eliminates electron traps existing throughout the Ta₂O₅ films but generates hole traps. This is maybe due to structural or stoichiometric change induced by the ozone annealing.

本文言語	English
ページ	131-134
ページ数	4
出版ステータス	Published - 1998 12月 1
イベント	Proceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn 継続期間: 1998 9月 27 → 1998 9月 30

Other

Other	Proceedings of the 1998 International Symposium on Electrical Insulating Materials
City	Toyohashi, Jpn
Period	98/9/27 → 98/9/30

ASJC Scopus subject areas

工学（全般）
材料科学（全般）

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引用スタイル

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title = "Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition",

abstract = "The effects of ozone annealing on the charge trapping property of TaO films grown on Si3N4 barrier layers by low pressure CVD are investigated. The ozone annealing eliminates electron traps existing throughout the Ta2O5 films but generates hole traps. This is maybe due to structural or stoichiometric change induced by the ozone annealing.",

author = "H. Kato and Seol, {K. S.} and T. Toyoda and Y. Ohki",

year = "1998",

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AU - Kato, H.

AU - Seol, K. S.

AU - Toyoda, T.

AU - Ohki, Y.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The effects of ozone annealing on the charge trapping property of TaO films grown on Si3N4 barrier layers by low pressure CVD are investigated. The ozone annealing eliminates electron traps existing throughout the Ta2O5 films but generates hole traps. This is maybe due to structural or stoichiometric change induced by the ozone annealing.

AB - The effects of ozone annealing on the charge trapping property of TaO films grown on Si3N4 barrier layers by low pressure CVD are investigated. The ozone annealing eliminates electron traps existing throughout the Ta2O5 films but generates hole traps. This is maybe due to structural or stoichiometric change induced by the ozone annealing.

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T2 - Proceedings of the 1998 International Symposium on Electrical Insulating Materials

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