TY - GEN
T1 - Effect of solution drift on crystalline morphology in the solution growth of off-axis 4H-SiC crystals
AU - Kato, Takashi
AU - Kusunoki, Kazuhiko
AU - Seki, Kazuaki
AU - Okada, Nobuhiro
AU - Kamei, Kazuhito
PY - 2016
Y1 - 2016
N2 - We investigated the effect of the solution flow on crystalline morphology in off-axis 4H-SiC solution growth. In particular, we focused on the relationship between the Si solution flow and step flow directions. In step parallel flow in which the solution drifted transversely to the step flow direction of the off-axis substrate, it was possible to attain a better surface morphology than when the solution drifted in the other direction. Furthermore, the surface morphology was found to be improved as the flow velocity increased. These improvements in morphological stability are presumed to be caused by the aligning of the solute concentration fluctuation along the steps.
AB - We investigated the effect of the solution flow on crystalline morphology in off-axis 4H-SiC solution growth. In particular, we focused on the relationship between the Si solution flow and step flow directions. In step parallel flow in which the solution drifted transversely to the step flow direction of the off-axis substrate, it was possible to attain a better surface morphology than when the solution drifted in the other direction. Furthermore, the surface morphology was found to be improved as the flow velocity increased. These improvements in morphological stability are presumed to be caused by the aligning of the solute concentration fluctuation along the steps.
KW - Off-axis 4H-SiC
KW - Solution flow
KW - Surface morphology
KW - Top-seeded solution growth
UR - http://www.scopus.com/inward/record.url?scp=84971516825&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84971516825&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.858.65
DO - 10.4028/www.scientific.net/MSF.858.65
M3 - Conference contribution
AN - SCOPUS:84971516825
SN - 9783035710427
VL - 858
T3 - Materials Science Forum
SP - 65
EP - 68
BT - Silicon Carbide and Related Materials 2015
PB - Trans Tech Publications Ltd
T2 - 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
Y2 - 4 October 2015 through 9 October 2015
ER -