抄録
GaAs//1// minus //xP//x crystals were grown by molecular-beam epitaxy with parametric variation of substrate temperature T//s (540-580 degree C) and of the ratio of beam intensity of P to that of As (2-11). The rate of decrease of composition ratio x with temperature, minus dx/dT//s, is 0. 003 degree C** minus **1 for all ratios of beam intensity. The sticking coefficient of P is found to vary inversely proportional to the substrate temperature in this temperature range. This fact indicates the possibility of writing two-dimensional patterns on the surface by a partial temperature rise.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 4198-4200 |
| ページ数 | 3 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 47 |
| 号 | 9 |
| DOI | |
| 出版ステータス | Published - 1976 9月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（全般）
- 物理学および天文学（その他）