Effect of substrate temperature on crystal orientation and residual stress in RF sputtered gallium nitride films

Engineering & Materials Science

• Crystal orientation 100%
• Gallium nitride 99%
• Residual stresses 62%
• Substrates 50%
• Sputtering 39%
• Temperature 28%
• Crystals 20%
• Sapphire 13%
• Nitrides 12%
• Single crystals 11%
• Diffraction 11%
• Compressive stress 10%
• Contamination 10%
• Impurities 9%
• X rays 9%
• Cracks 6%
• Gases 5%

Chemical Compounds

• Residual Stress 95%
• Crystal Orientation 91%
• Nitride 69%
• Liquid Film 34%
• Sputtering 33%
• White 8%
• Single Crystalline Solid 7%
• Surface 6%
• Pressure 5%
• Gas 5%

Physics & Astronomy

• gallium nitrides 83%
• residual stress 66%
• crystals 35%
• sputtering 24%
• temperature 21%
• gas pressure 9%
• nitrides 9%
• contamination 9%
• x ray diffraction 8%
• purity 8%
• sapphire 8%
• chambers 8%
• cracks 7%
• impurities 6%
• single crystals 6%