EFFECT OF THE SUBTHRESHOLD CURRENT ON SCALED-DOWN MOS DYNAMIC RAM's.

Koichiro Mashiko; Michihiro Yamada; Yasuji Nagayama; Tsutomu Yoshihara; Takao Nakano

EFFECT OF THE SUBTHRESHOLD CURRENT ON SCALED-DOWN MOS DYNAMIC RAM's.

Koichiro Mashiko^*, Michihiro Yamada, Yasuji Nagayama, Tsutomu Yoshihara, Takao Nakano

^*この研究の対応する著者

研究成果: Article › 査読

抄録

Data-output holding characteristics of MOS dynamic RAM's with 2. 5 mu m design rules are studied by employing the hidden-RAS-only-refresh mode. It is verified that the noise voltage caused by internal circuit operation increases the subthreshold current and that the clamp circuitry effectively decreases the subthreshold current.

本文言語	English
ページ（範囲）	429-431
ページ数	3
ジャーナル	IEEE Journal of Solid-State Circuits
巻	SC-18
号	4
出版ステータス	Published - 1983 8月
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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引用スタイル

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title = "EFFECT OF THE SUBTHRESHOLD CURRENT ON SCALED-DOWN MOS DYNAMIC RAM's.",

abstract = "Data-output holding characteristics of MOS dynamic RAM's with 2. 5 mu m design rules are studied by employing the hidden-RAS-only-refresh mode. It is verified that the noise voltage caused by internal circuit operation increases the subthreshold current and that the clamp circuitry effectively decreases the subthreshold current.",

author = "Koichiro Mashiko and Michihiro Yamada and Yasuji Nagayama and Tsutomu Yoshihara and Takao Nakano",

year = "1983",

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AU - Mashiko, Koichiro

AU - Yamada, Michihiro

AU - Nagayama, Yasuji

AU - Yoshihara, Tsutomu

AU - Nakano, Takao

PY - 1983/8

Y1 - 1983/8

N2 - Data-output holding characteristics of MOS dynamic RAM's with 2. 5 mu m design rules are studied by employing the hidden-RAS-only-refresh mode. It is verified that the noise voltage caused by internal circuit operation increases the subthreshold current and that the clamp circuitry effectively decreases the subthreshold current.

AB - Data-output holding characteristics of MOS dynamic RAM's with 2. 5 mu m design rules are studied by employing the hidden-RAS-only-refresh mode. It is verified that the noise voltage caused by internal circuit operation increases the subthreshold current and that the clamp circuitry effectively decreases the subthreshold current.

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JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

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EFFECT OF THE SUBTHRESHOLD CURRENT ON SCALED-DOWN MOS DYNAMIC RAM's.

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