Effective capacitance for gate delay with RC loads

Zhang Cai Huang*, Atsushi Kurokawa, Yasuaki Inoue

*この研究の対応する著者

    研究成果: Conference contribution

    6 被引用数 (Scopus)

    抄録

    In deep submicron designs, the resistance of interconnect is playing dominant role on the timing behavior of logic gates. The concept of effective capacitance C eff is usually used to calculate the gate delay for interconnect loads. In this paper, a new method to derive the expression C eff is presented, and the accuracy of the expression is discussed. In our approach, the output waveform is assumed as linear. Thus, the expression of effective capacitance is simple and efficient. Moreover, the result of effective capacitance is insensitive to output wave shape because C eff is determined by the curve area. Therefore, it is appropriate for various output waveform of CMOS gate with RC loads. Experimental results show it is in agreement with the Spice simulation.

    本文言語English
    ホスト出版物のタイトルProceedings - IEEE International Symposium on Circuits and Systems
    ページ2795-2798
    ページ数4
    DOI
    出版ステータスPublished - 2005
    イベントIEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan
    継続期間: 2005 5月 232005 5月 26

    Other

    OtherIEEE International Symposium on Circuits and Systems 2005, ISCAS 2005
    国/地域Japan
    CityKobe
    Period05/5/2305/5/26

    ASJC Scopus subject areas

    • 電子工学および電気工学

    フィンガープリント

    「Effective capacitance for gate delay with RC loads」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル