Effective control of surface property on poly(silsesquioxane) films by chemical modification

Takashi Hamada; Takashi Nagase; Takashi Kobayashi; Kimihiro Matsukawa; Hiroyoshi Naito

doi:10.1016/j.tsf.2008.09.033

Effective control of surface property on poly(silsesquioxane) films by chemical modification

Takashi Hamada, Takashi Nagase, Takashi Kobayashi, Kimihiro Matsukawa, Hiroyoshi Naito^*

^*この研究の対応する著者

研究成果: Article › 査読

12 被引用数 (Scopus)

抄録

We report the strategy of controlling the surface properties of polymethylsilsesquioxane (PMSQ) films by a silane-coupling agent. The surface properties of chemically modified PMSQ films are investigated by the water contact angle and Fourier transform infrared (FTIR) measurements. The FTIR spectra show the distinct change of the silanol peaks before and after octadecyltrichlorosilane (OTS) treatments of PMSQ films. The OTS-modified PMSQ films exhibit a high water contact angle of 100°, which is much higher than that of non-treated PMSQ films (89°). The electrical performances of organic thin-film transistors are enhanced by the surface modification of PMSQ films using OTS as the silane-coupling agent.

本文言語	English
ページ（範囲）	1335-1339
ページ数	5
ジャーナル	Thin Solid Films
巻	517
号	4
DOI	https://doi.org/10.1016/j.tsf.2008.09.033
出版ステータス	Published - 2008 12月 31
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
表面および界面
表面、皮膜および薄膜
金属および合金
材料化学

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10.1016/j.tsf.2008.09.033

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title = "Effective control of surface property on poly(silsesquioxane) films by chemical modification",

abstract = "We report the strategy of controlling the surface properties of polymethylsilsesquioxane (PMSQ) films by a silane-coupling agent. The surface properties of chemically modified PMSQ films are investigated by the water contact angle and Fourier transform infrared (FTIR) measurements. The FTIR spectra show the distinct change of the silanol peaks before and after octadecyltrichlorosilane (OTS) treatments of PMSQ films. The OTS-modified PMSQ films exhibit a high water contact angle of 100°, which is much higher than that of non-treated PMSQ films (89°). The electrical performances of organic thin-film transistors are enhanced by the surface modification of PMSQ films using OTS as the silane-coupling agent.",

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author = "Takashi Hamada and Takashi Nagase and Takashi Kobayashi and Kimihiro Matsukawa and Hiroyoshi Naito",

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AU - Hamada, Takashi

AU - Nagase, Takashi

AU - Kobayashi, Takashi

AU - Matsukawa, Kimihiro

AU - Naito, Hiroyoshi

PY - 2008/12/31

Y1 - 2008/12/31

N2 - We report the strategy of controlling the surface properties of polymethylsilsesquioxane (PMSQ) films by a silane-coupling agent. The surface properties of chemically modified PMSQ films are investigated by the water contact angle and Fourier transform infrared (FTIR) measurements. The FTIR spectra show the distinct change of the silanol peaks before and after octadecyltrichlorosilane (OTS) treatments of PMSQ films. The OTS-modified PMSQ films exhibit a high water contact angle of 100°, which is much higher than that of non-treated PMSQ films (89°). The electrical performances of organic thin-film transistors are enhanced by the surface modification of PMSQ films using OTS as the silane-coupling agent.

AB - We report the strategy of controlling the surface properties of polymethylsilsesquioxane (PMSQ) films by a silane-coupling agent. The surface properties of chemically modified PMSQ films are investigated by the water contact angle and Fourier transform infrared (FTIR) measurements. The FTIR spectra show the distinct change of the silanol peaks before and after octadecyltrichlorosilane (OTS) treatments of PMSQ films. The OTS-modified PMSQ films exhibit a high water contact angle of 100°, which is much higher than that of non-treated PMSQ films (89°). The electrical performances of organic thin-film transistors are enhanced by the surface modification of PMSQ films using OTS as the silane-coupling agent.

KW - Chemical modification

KW - Organic thin-film transistor

KW - Polysilsesquioxane

KW - Surface property

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Effective control of surface property on poly(silsesquioxane) films by chemical modification

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