Effects of atomic disorder on carrier transport in Si nanowire transistors

Hideki Minari; Tomofumi Zushi; Takanobu Watanabe; Yoshinari Kamakura; Nobuya Mori

doi:10.1109/SISPAD.2011.6035041

Effects of atomic disorder on carrier transport in Si nanowire transistors

Hideki Minari^*, Tomofumi Zushi, Takanobu Watanabe, Yoshinari Kamakura, Nobuya Mori

^*この研究の対応する著者

基幹理工学部

研究成果: Conference contribution

抄録

Effects of oxidation-process-induced atomic disorder on extended electronic states in the channel region of narrow Si nanowire (NW) field-effect- transistors (FETs) are theoretically investigated by using the molecular dynamics, empirical tight-binding, and non-equilibrium Green's function methods. Simulation results show that the injection velocity in n-type Si NW FETs is less affected by the disorder compared to p-type devices, which can be attributed to differences in the in-plane carrier profile.

本文言語	English
ホスト出版物のタイトル	2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
ページ	27-30
ページ数	4
DOI	https://doi.org/10.1109/SISPAD.2011.6035041
出版ステータス	Published - 2011 11月 1
イベント	2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka, Japan 継続期間: 2011 9月 8 → 2011 9月 10

出版物シリーズ

名前	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
国/地域	Japan
City	Osaka
Period	11/9/8 → 11/9/10

ASJC Scopus subject areas

電子工学および電気工学
コンピュータサイエンスの応用
モデリングとシミュレーション

文献へのアクセス

10.1109/SISPAD.2011.6035041

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引用スタイル

Minari, H., Zushi, T., Watanabe, T., Kamakura, Y., & Mori, N. (2011). Effects of atomic disorder on carrier transport in Si nanowire transistors. In 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 (pp. 27-30). [6035041] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2011.6035041

Effects of atomic disorder on carrier transport in Si nanowire transistors. / Minari, Hideki; Zushi, Tomofumi; Watanabe, Takanobu その他.
2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. 2011. p. 27-30 6035041 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

研究成果: Conference contribution

Minari, H, Zushi, T, Watanabe, T, Kamakura, Y & Mori, N 2011, Effects of atomic disorder on carrier transport in Si nanowire transistors. in 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011., 6035041, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 27-30, 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011, Osaka, Japan, 11/9/8. https://doi.org/10.1109/SISPAD.2011.6035041

Minari H, Zushi T, Watanabe T, Kamakura Y, Mori N. Effects of atomic disorder on carrier transport in Si nanowire transistors. In 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. 2011. p. 27-30. 6035041. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2011.6035041

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abstract = "Effects of oxidation-process-induced atomic disorder on extended electronic states in the channel region of narrow Si nanowire (NW) field-effect- transistors (FETs) are theoretically investigated by using the molecular dynamics, empirical tight-binding, and non-equilibrium Green's function methods. Simulation results show that the injection velocity in n-type Si NW FETs is less affected by the disorder compared to p-type devices, which can be attributed to differences in the in-plane carrier profile.",

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Effects of atomic disorder on carrier transport in Si nanowire transistors

抄録

出版物シリーズ

Conference

ASJC Scopus subject areas

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