TY - GEN
T1 - Effects of atomic disorder on impact ionization rate in silicon nanodots
AU - Mori, N.
AU - Tomita, M.
AU - Minari, H.
AU - Watanabe, T.
AU - Koshida, N.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - We theoretically investigate effects of atomic disorder existing near the Si/SiO2 interfaces on the impact ionization rate of a Si nanodot (SiND). We find that the impact ionization rate of a disordered SiND becomes higher near the threshold energy and approaches that of an ideal SiND for higher energy region.
AB - We theoretically investigate effects of atomic disorder existing near the Si/SiO2 interfaces on the impact ionization rate of a Si nanodot (SiND). We find that the impact ionization rate of a disordered SiND becomes higher near the threshold energy and approaches that of an ideal SiND for higher energy region.
KW - Avalanche Photodiode
KW - Impact ionization
KW - Molecular-Dynamics Calculation
KW - Monte Carlo Simulation
KW - Nanocrystalline Silicon
UR - http://www.scopus.com/inward/record.url?scp=84907321727&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84907321727&partnerID=8YFLogxK
U2 - 10.1063/1.4848445
DO - 10.1063/1.4848445
M3 - Conference contribution
AN - SCOPUS:84907321727
SN - 9780735411944
T3 - AIP Conference Proceedings
SP - 381
EP - 382
BT - Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PB - American Institute of Physics Inc.
T2 - 31st International Conference on the Physics of Semiconductors, ICPS 2012
Y2 - 29 July 2012 through 3 August 2012
ER -