Effects of Hf and W doping on the commensurate charge density waves in 1T-TaS2

Hiroshi Fujimoto; Hajime Ozaki

doi:10.1016/0038-1098(84)91043-3

Effects of Hf and W doping on the commensurate charge density waves in 1T-TaS₂

Hiroshi Fujimoto^*, Hajime Ozaki

^*この研究の対応する著者

人間科学部

研究成果: Article › 査読

14 被引用数 (Scopus)

抄録

The electrical resistivities of Hf-doped and W-doped 1T-TaS₂ have been measured to investigate the influence of varying the Fermi level on the formation of commensurate charge density waves. It was found that W-doping is far more effective in breaking the C-CDW phase than Hf-doping. Such results are explained by the energy consideration of the system with the Hubbard gap which is produced by the Mott-localization.

本文言語	English
ページ（範囲）	1117-1119
ページ数	3
ジャーナル	Solid State Communications
巻	49
号	12
DOI	https://doi.org/10.1016/0038-1098(84)91043-3
出版ステータス	Published - 1984 3月

ASJC Scopus subject areas

化学 (全般)
凝縮系物理学
材料化学

文献へのアクセス

10.1016/0038-1098(84)91043-3

他のファイルとリンク

引用スタイル

@article{0aea039ded12413e937252351483f025,

title = "Effects of Hf and W doping on the commensurate charge density waves in 1T-TaS2",

abstract = "The electrical resistivities of Hf-doped and W-doped 1T-TaS2 have been measured to investigate the influence of varying the Fermi level on the formation of commensurate charge density waves. It was found that W-doping is far more effective in breaking the C-CDW phase than Hf-doping. Such results are explained by the energy consideration of the system with the Hubbard gap which is produced by the Mott-localization.",

author = "Hiroshi Fujimoto and Hajime Ozaki",

year = "1984",

month = mar,

doi = "10.1016/0038-1098(84)91043-3",

language = "English",

volume = "49",

pages = "1117--1119",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "12",

}

TY - JOUR

T1 - Effects of Hf and W doping on the commensurate charge density waves in 1T-TaS2

AU - Fujimoto, Hiroshi

AU - Ozaki, Hajime

PY - 1984/3

Y1 - 1984/3

N2 - The electrical resistivities of Hf-doped and W-doped 1T-TaS2 have been measured to investigate the influence of varying the Fermi level on the formation of commensurate charge density waves. It was found that W-doping is far more effective in breaking the C-CDW phase than Hf-doping. Such results are explained by the energy consideration of the system with the Hubbard gap which is produced by the Mott-localization.

AB - The electrical resistivities of Hf-doped and W-doped 1T-TaS2 have been measured to investigate the influence of varying the Fermi level on the formation of commensurate charge density waves. It was found that W-doping is far more effective in breaking the C-CDW phase than Hf-doping. Such results are explained by the energy consideration of the system with the Hubbard gap which is produced by the Mott-localization.

UR - http://www.scopus.com/inward/record.url?scp=0021393324&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021393324&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(84)91043-3

DO - 10.1016/0038-1098(84)91043-3

M3 - Article

AN - SCOPUS:0021393324

SN - 0038-1098

VL - 49

SP - 1117

EP - 1119

JO - Solid State Communications

JF - Solid State Communications

IS - 12

ER -