抄録
The effects of thermal annealing and ion implantation on the photoluminescence (PL) in amorphous silicon nitride (a-SiNx) prepared by low-pressure chemical vapor deposition (LPCVD) are investigated. A broad PL band centered at 2.4 eV, consisting of two component PL bands at 2.66 and 2.15 eV, is observed in the as-deposited sample. The PL intensity is found to decrease if the film is thermally annealed, while the decreased PL intensity of the ion-implanted film recovers by the thermal annealing. Based on these results, it is shown that the defects generated by hydrogen release or bond breaking act as nonradiative recombination centers that quench the PL.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 6746-6750 |
| ページ数 | 5 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 85 |
| 号 | 9 |
| DOI | |
| 出版ステータス | Published - 1999 5月 1 |
ASJC Scopus subject areas
- 物理学および天文学（全般）