Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties

T. Kuroi; S. Kusunoki; M. Shirahata; Y. Okumura; M. Kobayashi; M. Inuishi; N. Tsubouchi

Effects of nitrogen implantation into P⁺ poly-silicon gate on gate oxide properties

T. Kuroi^*, S. Kusunoki, M. Shirahata, Y. Okumura, M. Kobayashi, M. Inuishi, N. Tsubouchi

^*この研究の対応する著者

研究成果: Conference article › 査読

25 被引用数 (Scopus)

抄録

We have studied the effects of nitrogen implantation into P⁺ poly-silicon gate on gate oxide properties in detail for the surface channel PMOS below 0.25 μm. It was founded that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into P⁺ poly-silicon gate. Moreover the generation of interface states and traps can be also reduced by nitrogen implantation. Therefore the resistance against the hot carrier injection can be dramatically improved. These improvement would be due to the incorporation of nitrogen into gate oxide film and the reduction of boron and fluorine atoms in the gate oxide film.

本文言語	English
ページ（範囲）	107-108
ページ数	2
ジャーナル	Digest of Technical Papers - Symposium on VLSI Technology
出版ステータス	Published - 1994 12月 1
外部発表	はい
イベント	Proceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA 継続期間: 1994 6月 7 → 1994 6月 9

ASJC Scopus subject areas

電子工学および電気工学

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引用スタイル

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title = "Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties",

abstract = "We have studied the effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties in detail for the surface channel PMOS below 0.25 μm. It was founded that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into P+ poly-silicon gate. Moreover the generation of interface states and traps can be also reduced by nitrogen implantation. Therefore the resistance against the hot carrier injection can be dramatically improved. These improvement would be due to the incorporation of nitrogen into gate oxide film and the reduction of boron and fluorine atoms in the gate oxide film.",

author = "T. Kuroi and S. Kusunoki and M. Shirahata and Y. Okumura and M. Kobayashi and M. Inuishi and N. Tsubouchi",

year = "1994",

month = dec,

day = "1",

language = "English",

pages = "107--108",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1994 Symposium on VLSI Technology ; Conference date: 07-06-1994 Through 09-06-1994",

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TY - JOUR

T1 - Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties

AU - Kuroi, T.

AU - Kusunoki, S.

AU - Shirahata, M.

AU - Okumura, Y.

AU - Kobayashi, M.

AU - Inuishi, M.

AU - Tsubouchi, N.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We have studied the effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties in detail for the surface channel PMOS below 0.25 μm. It was founded that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into P+ poly-silicon gate. Moreover the generation of interface states and traps can be also reduced by nitrogen implantation. Therefore the resistance against the hot carrier injection can be dramatically improved. These improvement would be due to the incorporation of nitrogen into gate oxide film and the reduction of boron and fluorine atoms in the gate oxide film.

AB - We have studied the effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties in detail for the surface channel PMOS below 0.25 μm. It was founded that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into P+ poly-silicon gate. Moreover the generation of interface states and traps can be also reduced by nitrogen implantation. Therefore the resistance against the hot carrier injection can be dramatically improved. These improvement would be due to the incorporation of nitrogen into gate oxide film and the reduction of boron and fluorine atoms in the gate oxide film.

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M3 - Conference article

AN - SCOPUS:0028554605

SN - 0743-1562

SP - 107

EP - 108

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - Proceedings of the 1994 Symposium on VLSI Technology

Y2 - 7 June 1994 through 9 June 1994

ER -

Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties

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ASJC Scopus subject areas

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引用スタイル

Effects of nitrogen implantation into P⁺ poly-silicon gate on gate oxide properties