Effects of Strain on Carrier Recombination in GaN Quantum Dots

A. Neogi*, H. O. Everitt, H. Morkoç, T. Kuroda, A. Tackeuchi

*この研究の対応する著者

研究成果: Conference contribution

抄録

Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.

本文言語English
ホスト出版物のタイトルQuantum Electronics and Laser Science Conference, QELS 2003
出版社Optica Publishing Group (formerly OSA)
ISBN(電子版)1557527490, 9781557527493
出版ステータスPublished - 2003
イベントQuantum Electronics and Laser Science Conference, QELS 2003 - Baltimore, United States
継続期間: 2003 6月 12003 6月 6

出版物シリーズ

名前Optics InfoBase Conference Papers
ISSN(電子版)2162-2701

Conference

ConferenceQuantum Electronics and Laser Science Conference, QELS 2003
国/地域United States
CityBaltimore
Period03/6/103/6/6

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 材料力学

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