TY - JOUR
T1 - Efficient and Narrow-Linewidth Photoluminescence Devices Based on Single-Walled Carbon Nanotubes and Silicon Photonics
AU - Higuchi, Naoto
AU - Niiyama, Hiroto
AU - Nakagawa, Kenta
AU - Maki, Hideyuki
N1 - Funding Information:
We thank H. Sumikura from NTT Basic Research Laboratories; S. Nakamura and R. Kawabe from Keio University; and D. Tsuya, E. Watanabe, H. Osato, M. Yoshida, S. Moriyama, and K. Komatsu from the National Institute for Materials Science for technical support. This work was partially financially supported by PRESTO (Grant No. JPMJPR152B) from JST and by KAKENHI (Grant Nos. 16H04355, 23686055, 18K19025, and 20H02210). This work was technically supported by Kanagawa Institute of Industrial Science and Technology (KISTEC), Spintronics Research Network of Japan, and the Core-to-Core Program from JSPS. This work was conducted at the NIMS Nanofabrication Platform, supported by the “Nanotechnology Platform Program” of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.
Publisher Copyright:
© 2020 American Chemical Society.
PY - 2020/8/28
Y1 - 2020/8/28
N2 - We report the development of narrow-linewidth photoluminescence (PL) devices based on single-walled carbon nanotubes (SWNTs) and silicon photonics with microresonators and waveguides that can generate in-line PL at a telecommunication wavelength of 1.55 μm band. We coupled the PL from SWNTs to the ring and disk resonators to obtain low-background narrow-linewidth PL. From the ring resonator device, narrow-linewidth PL emission with a high Q factor of ∼3000 is obtained. In addition, the PL emission is enhanced by a factor of approximately 34 due to confinement of the excitation light in the resonator. The saturable absorption of the SWNTs on the resonator causes the PL intensity and Q factor to depend on the excitation intensity. We also developed a SWNT-PL device with a disk resonator and report the narrower-linewidth PL with a maximum Q factor of 5700, which we attribute to decreased scattering loss from the single sidewall. This simple on-chip, in-line PL system in the telecommunication band can open a route to highly integrated silicon photonics and optoelectronics based on SWNTs for the applications of optical communications, optical interconnects, quantum photonics, etc.
AB - We report the development of narrow-linewidth photoluminescence (PL) devices based on single-walled carbon nanotubes (SWNTs) and silicon photonics with microresonators and waveguides that can generate in-line PL at a telecommunication wavelength of 1.55 μm band. We coupled the PL from SWNTs to the ring and disk resonators to obtain low-background narrow-linewidth PL. From the ring resonator device, narrow-linewidth PL emission with a high Q factor of ∼3000 is obtained. In addition, the PL emission is enhanced by a factor of approximately 34 due to confinement of the excitation light in the resonator. The saturable absorption of the SWNTs on the resonator causes the PL intensity and Q factor to depend on the excitation intensity. We also developed a SWNT-PL device with a disk resonator and report the narrower-linewidth PL with a maximum Q factor of 5700, which we attribute to decreased scattering loss from the single sidewall. This simple on-chip, in-line PL system in the telecommunication band can open a route to highly integrated silicon photonics and optoelectronics based on SWNTs for the applications of optical communications, optical interconnects, quantum photonics, etc.
KW - carbon nanotubes
KW - microresonator
KW - photoluminescence
KW - saturable absorption
KW - silicon photonics
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U2 - 10.1021/acsanm.0c01296
DO - 10.1021/acsanm.0c01296
M3 - Article
AN - SCOPUS:85092226524
SN - 2574-0970
VL - 3
SP - 7678
EP - 7684
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
IS - 8
ER -