Electrical and electrochemical properties of alkyl-monolayer Modified Si(111) in the presence of water

Tetsuya Osaka*, Mariko Matsunaga, So Kudo, Daisuke Niwa, Yosi Shacham-Diamand, Wolfram Jaegermann, Ralf Hunger


研究成果: Article査読

7 被引用数 (Scopus)


Fundamental electronic properties of methyl-modified n-Si(111) interfaces created by the displacement of Cl on Si(111) surface by the methyl group from Grignard reagents (RMgX; X=Br or Cl, R = methyl) were measured in the presence and absence of water. The presence of water played a significant role in determining the behavior of the devices. The structure of Ga-In /methyl monolayer/ n-Si(111) was not rectifying but only consisted of series resistances. On the other hand, a diode-like rectifying property was observed with the water/methyl layers/ n-Si(111) heterojunction structure. Functionalization of Si(111) surfaces with various alkyl moieties such as methyl, ethyl, propyl, butyl, and mixed methyl/propyl, was studied by electrochemical measurements performed in a mixture of 3 mM K3 Fe(CN) 6 3 mM K4 Fe(CN) 6 1 MKCl H2 O and by surface characterization with synchrotron radiation X-ray photoelectron spectroscopy. The transistor characteristics of field effect transistor-like devices with water/alkyl/ n-Si(111) gate structures were investigated. The device properties clearly depended on the alkyl moiety: transistor-like behavior was observed only for devices with methyl moiety, and for those with a mixed methyl-propyl monolayer prepared by using Grignard reagents with mixed methyl and propyl (CH3 MgBr: CH3 CH2 CH2 MgBr=1:9) moieties, whereas no transistor-like behavior was observed for devices with butyl or ethyl moiety.

ジャーナルJournal of the Electrochemical Society
出版ステータスPublished - 2007 10月 5

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学


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