For n-type Si-doped AlN, we have obtained an electron mobility and concentration of 125 cm2 V-1 s-1 and 1.75 × 10 15 cm-3 at 300 K, respectively. At 250 K, the mobility reached the maximum of 141 cm2 V-1s-1. To explain the temperature dependence of the mobility, we calculated mobilities limited by specific scattering mechanisms. We found that the mobility is limited by neutral impurity scattering rather than ionized impurity scattering or lattice scattering because of a large donor ionization energy (∼ 250 meV).
|ジャーナル||Applied Physics Letters|
|出版ステータス||Published - 2004 11月 15|
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