Electrical conduction properties of n-type Si-doped AIN with high electron mobility (>100 cm2 V-1 s-1)

Yoshitaka Taniyasu; Makoto Kasu; Toshiki Makimoto

doi:10.1063/1.1824181

Electrical conduction properties of n-type Si-doped AIN with high electron mobility (>100 cm² V^-1 s^-1)

Yoshitaka Taniyasu^*, Makoto Kasu, Toshiki Makimoto

^*この研究の対応する著者

研究成果: Article › 査読

119 被引用数 (Scopus)

抄録

For n-type Si-doped AlN, we have obtained an electron mobility and concentration of 125 cm² V-1 s^-1 and 1.75 × 10 ¹⁵ cm^-3 at 300 K, respectively. At 250 K, the mobility reached the maximum of 141 cm² V^-1s^-1. To explain the temperature dependence of the mobility, we calculated mobilities limited by specific scattering mechanisms. We found that the mobility is limited by neutral impurity scattering rather than ionized impurity scattering or lattice scattering because of a large donor ionization energy (∼ 250 meV).

本文言語	English
ページ（範囲）	4672-4674
ページ数	3
ジャーナル	Applied Physics Letters
巻	85
号	20
DOI	https://doi.org/10.1063/1.1824181
出版ステータス	Published - 2004 11月 15
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.1824181

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引用スタイル

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