TY - JOUR
T1 - Electro-optic properties of Pb(Zr1-xTix)O 3 (X = 0, 0.3, 0.6) films prepared by aerosol deposition
AU - Nakada, Masafumi
AU - Ohashi, Keishi
AU - Akedo, Jun
PY - 2005/8/26
Y1 - 2005/8/26
N2 - We measured annealing temperature and the Zr-to-Ti concentration ratio dependence of the electro-optic (EO) effect for highly transparent Pb(Zr 1-xTix)O3 [PZT] films more than 1 μm thick, directly deposited on glass substrates by aerosol deposition (AD). X-ray diffraction patterns show that as-deposited AD films have a large strain and lattice distortions, and these affects can be attenuated by increasing annealing temperature. The dielectric constant of AD-PZT films increased with annealing temperature, which is consistent with the X-ray diffraction measurement. The EO effect was enhanced with increasing Zr concentration, and a linear EO coefficient (rc) of 102 pm/V was obtained for the PbZr 0.6T0.4O3 film annealed at 600°C, whose composition is near its morphotropic phase boundary. The rc of PbZr0.6T0.4O3 films increased with annealing temperature, and the film annealed at 850°C showed an rc of 168 pm/V. The EO measurements show that AD is a highly promising film-deposition method for optical devices such as EO modulators and optical switches.
AB - We measured annealing temperature and the Zr-to-Ti concentration ratio dependence of the electro-optic (EO) effect for highly transparent Pb(Zr 1-xTix)O3 [PZT] films more than 1 μm thick, directly deposited on glass substrates by aerosol deposition (AD). X-ray diffraction patterns show that as-deposited AD films have a large strain and lattice distortions, and these affects can be attenuated by increasing annealing temperature. The dielectric constant of AD-PZT films increased with annealing temperature, which is consistent with the X-ray diffraction measurement. The EO effect was enhanced with increasing Zr concentration, and a linear EO coefficient (rc) of 102 pm/V was obtained for the PbZr 0.6T0.4O3 film annealed at 600°C, whose composition is near its morphotropic phase boundary. The rc of PbZr0.6T0.4O3 films increased with annealing temperature, and the film annealed at 850°C showed an rc of 168 pm/V. The EO measurements show that AD is a highly promising film-deposition method for optical devices such as EO modulators and optical switches.
KW - Aerosol deposition
KW - Complex oxide
KW - Electro-optic properties
KW - Film
KW - PZT
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U2 - 10.1143/JJAP.44.L1088
DO - 10.1143/JJAP.44.L1088
M3 - Article
AN - SCOPUS:32044440781
SN - 0021-4922
VL - 44
SP - L1088-L1090
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 33-36
ER -