抄録
The microstructure of InxGa1-xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 2025-2031 |
| ページ数 | 7 |
| ジャーナル | Journal of Electronic Materials |
| 巻 | 24 |
| 号 | 12 |
| DOI | |
| 出版ステータス | Published - 1995 12月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）
- 電子材料、光学材料、および磁性材料
- 材料科学（全般）
- 電子工学および電気工学