Electron microscope studies of In_xGav_1-xAs/GaAs/Si grown by metalorganic chemical vapor deposition

Engineering & Materials Science

• Dislocations (crystals) 86%
• Metallorganic chemical vapor deposition 85%
• Relaxation processes 80%
• Transmission electron microscopy 55%
• Electron microscopes 51%
• Microstructure 36%

Chemical Compounds

• Misfit Dislocation 100%
• Chemical Vapour Deposition 48%
• Strain 37%
• Microstructure 36%
• Transmission Electron Microscopy 35%
• Electron Particle 29%

Physics & Astronomy

• metalorganic chemical vapor deposition 51%
• electron microscopes 42%
• transmission electron microscopy 17%
• microstructure 15%