Electronic structure of In1-xMnxAs studied by photoemission spectroscopy: Comparison with Ga1-xMnxAs

J. Okabayashi; T. Mizokawa; D. D. Sarma; A. Fujimori; T. Slupinski; A. Oiwa; H. Munekata

Electronic structure of In_1-xMn_xAs studied by photoemission spectroscopy: Comparison with Ga_1-xMn_xAs

J. Okabayashi, T. Mizokawa, D. D. Sarma, A. Fujimori, T. Slupinski, A. Oiwa, H. Munekata

研究成果: Article › 査読

抄録

We have investigated the electronic structure of the p-type diluted magnetic semiconductor In_1-xMn_xAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga_1-xMn_xAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga_1-xMn_xAs. This difference would explain the difference in transport, magnetic and optical properties of In_1-xMn_xAs and Ga_1-xMn_xAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In_1-xMn_xAs than in Ga_1-xMn_xAs.

本文言語	English
論文番号	161203
ページ（範囲）	1612031-1612034
ページ数	4
ジャーナル	Physical Review B - Condensed Matter and Materials Physics
巻	65
号	16
出版ステータス	Published - 2002 4月 15
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学

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引用スタイル

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title = "Electronic structure of In1-xMnxAs studied by photoemission spectroscopy: Comparison with Ga1-xMnxAs",

abstract = "We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.",

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T1 - Electronic structure of In1-xMnxAs studied by photoemission spectroscopy

T2 - Comparison with Ga1-xMnxAs

AU - Okabayashi, J.

AU - Mizokawa, T.

AU - Sarma, D. D.

AU - Fujimori, A.

AU - Slupinski, T.

AU - Oiwa, A.

AU - Munekata, H.

PY - 2002/4/15

Y1 - 2002/4/15

N2 - We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.

AB - We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.

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Electronic structure of In1-xMnxAs studied by photoemission spectroscopy: Comparison with Ga1-xMnxAs

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Electronic structure of In_1-xMn_xAs studied by photoemission spectroscopy: Comparison with Ga_1-xMn_xAs