TY - JOUR
T1 - Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy
AU - Nakamura, Jin
AU - Kabasawa, Eiki
AU - Harada, Yoshihisa
AU - Iriyama, Shingo
AU - Kawano, Akihiro
AU - Oguchi, Tamio
AU - Kuroki, Kazuhiko
AU - Takano, Yoshihiko
AU - Kawarada, Hiroshi
N1 - Funding Information:
This work was supported by MST and MEXT, Japan.
PY - 2010/12
Y1 - 2010/12
N2 - Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B2 dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or Bn cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.
AB - Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B2 dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or Bn cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.
KW - Boron-doped diamond
KW - Carrier compensation
KW - Electronic structure
KW - Soft X-rays absorption spectroscopy
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U2 - 10.1016/j.physc.2010.05.240
DO - 10.1016/j.physc.2010.05.240
M3 - Article
AN - SCOPUS:78649705400
SN - 0921-4534
VL - 470
SP - S671-S672
JO - Physica C: Superconductivity and its Applications
JF - Physica C: Superconductivity and its Applications
IS - SUPPL.1
ER -