Enhanced temperature characteristics of InGaAs/InAIGaAs multi-quantum-well lasers on low-in-content InGaAs ternary substrates

Takeshi Fujisawa; Masakazu Arai; Takaaki Kakitsuka; Takayuki Yamanaka; Yasuhiro Kondo; Hiroshi Yasaka

doi:10.1143/APEX.1.041203

Enhanced temperature characteristics of InGaAs/InAIGaAs multi-quantum-well lasers on low-in-content InGaAs ternary substrates

Takeshi Fujisawa^*, Masakazu Arai, Takaaki Kakitsuka, Takayuki Yamanaka, Yasuhiro Kondo, Hiroshi Yasaka

^*この研究の対応する著者

研究成果: Article › 査読

8 被引用数 (Scopus)

抄録

Temperature characteristics of multi-quantum-well lasers on InGaAs ternary substrates are investigated. By using InAlGaAs barriers and low-In-content InGaAs substrates, the characteristic temperature of the laser can reach as high as 150K between 25 and 85°C due to the enhancement of the material gain. Calculated characteristic temperatures are in good agreement with those obtained by experiment, showing the validity of the results presented here.

本文言語	English
ページ（範囲）	412031-412033
ページ数	3
ジャーナル	Applied Physics Express
巻	1
号	4
DOI	https://doi.org/10.1143/APEX.1.041203
出版ステータス	Published - 2008 4月
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.1143/APEX.1.041203

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引用スタイル

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author = "Takeshi Fujisawa and Masakazu Arai and Takaaki Kakitsuka and Takayuki Yamanaka and Yasuhiro Kondo and Hiroshi Yasaka",

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AU - Arai, Masakazu

AU - Kakitsuka, Takaaki

AU - Yamanaka, Takayuki

AU - Kondo, Yasuhiro

AU - Yasaka, Hiroshi

PY - 2008/4

Y1 - 2008/4

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AB - Temperature characteristics of multi-quantum-well lasers on InGaAs ternary substrates are investigated. By using InAlGaAs barriers and low-In-content InGaAs substrates, the characteristic temperature of the laser can reach as high as 150K between 25 and 85°C due to the enhancement of the material gain. Calculated characteristic temperatures are in good agreement with those obtained by experiment, showing the validity of the results presented here.

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