Enhancement/depletion MESFETSs of diamond and their logic circuits

A. Hokazono; T. Ishikura; K. Nakamura; S. Yamashita; H. Kawarada

doi:10.1016/s0925-9635(96)00726-1

Enhancement/depletion MESFETSs of diamond and their logic circuits

A. Hokazono^*, T. Ishikura, K. Nakamura, S. Yamashita, H. Kawarada

^*この研究の対応する著者

基幹理工学部

研究成果: Article › 査読

66 被引用数 (Scopus)

抄録

Using the p-type surface-conductive layer of diamond film, enhancement mode and depletion mode MESFETs have been fabricated by changing the metals of the gate electrode. The threshold voltages of MESFETs depend on the electronegativity of the metals. A MESFET with a Cr gate was operated in depletion mode and exhibited a peak transconductance of 12.3 mS mm^-1, which is the highest in diamond FETs. This high performance can be obtained by a self-aligned gate fabrication process, which minimizes the spacing between the ohmic contacts and the Schottky contact. By utilizing an E-MESFET for the driver and a D-MESFET for the active load, E/D-type logic circuits such as NOT, NAND and NOR circuits have been fabricated for the first time.

本文言語	English
ページ（範囲）	339-343
ページ数	5
ジャーナル	Diamond and Related Materials
巻	6
号	2-4
DOI	https://doi.org/10.1016/s0925-9635(96)00726-1
出版ステータス	Published - 1997 3月

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
機械工学
物理学および天文学（全般）
材料化学
化学 (全般)
電子工学および電気工学

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title = "Enhancement/depletion MESFETSs of diamond and their logic circuits",

abstract = "Using the p-type surface-conductive layer of diamond film, enhancement mode and depletion mode MESFETs have been fabricated by changing the metals of the gate electrode. The threshold voltages of MESFETs depend on the electronegativity of the metals. A MESFET with a Cr gate was operated in depletion mode and exhibited a peak transconductance of 12.3 mS mm-1, which is the highest in diamond FETs. This high performance can be obtained by a self-aligned gate fabrication process, which minimizes the spacing between the ohmic contacts and the Schottky contact. By utilizing an E-MESFET for the driver and a D-MESFET for the active load, E/D-type logic circuits such as NOT, NAND and NOR circuits have been fabricated for the first time.",

keywords = "Device, Hydrogen, Ion bombardment, Metal",

author = "A. Hokazono and T. Ishikura and K. Nakamura and S. Yamashita and H. Kawarada",

note = "Funding Information: Laboratory of Waseda University for their assistance, and Prof. I. Ohdomari of the Department of Electronics and Communication, Waseda University, for discussions. They would like to thank Mr. S. Shikata of Sumitomo Electric Industries for providing the synthetic Ib diamond substrates. This work was supported, in part, by a Grant-in-aid for General Scientific Research (07650384) from the Ministry of Education, Science and Culture of Japan.",

year = "1997",

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doi = "10.1016/s0925-9635(96)00726-1",

language = "English",

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T1 - Enhancement/depletion MESFETSs of diamond and their logic circuits

AU - Hokazono, A.

AU - Ishikura, T.

AU - Nakamura, K.

AU - Yamashita, S.

AU - Kawarada, H.

N1 - Funding Information: Laboratory of Waseda University for their assistance, and Prof. I. Ohdomari of the Department of Electronics and Communication, Waseda University, for discussions. They would like to thank Mr. S. Shikata of Sumitomo Electric Industries for providing the synthetic Ib diamond substrates. This work was supported, in part, by a Grant-in-aid for General Scientific Research (07650384) from the Ministry of Education, Science and Culture of Japan.

PY - 1997/3

Y1 - 1997/3

N2 - Using the p-type surface-conductive layer of diamond film, enhancement mode and depletion mode MESFETs have been fabricated by changing the metals of the gate electrode. The threshold voltages of MESFETs depend on the electronegativity of the metals. A MESFET with a Cr gate was operated in depletion mode and exhibited a peak transconductance of 12.3 mS mm-1, which is the highest in diamond FETs. This high performance can be obtained by a self-aligned gate fabrication process, which minimizes the spacing between the ohmic contacts and the Schottky contact. By utilizing an E-MESFET for the driver and a D-MESFET for the active load, E/D-type logic circuits such as NOT, NAND and NOR circuits have been fabricated for the first time.

AB - Using the p-type surface-conductive layer of diamond film, enhancement mode and depletion mode MESFETs have been fabricated by changing the metals of the gate electrode. The threshold voltages of MESFETs depend on the electronegativity of the metals. A MESFET with a Cr gate was operated in depletion mode and exhibited a peak transconductance of 12.3 mS mm-1, which is the highest in diamond FETs. This high performance can be obtained by a self-aligned gate fabrication process, which minimizes the spacing between the ohmic contacts and the Schottky contact. By utilizing an E-MESFET for the driver and a D-MESFET for the active load, E/D-type logic circuits such as NOT, NAND and NOR circuits have been fabricated for the first time.

KW - Device

KW - Hydrogen

KW - Ion bombardment

KW - Metal

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Enhancement/depletion MESFETSs of diamond and their logic circuits

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