TY - GEN
T1 - Ensemble Monte Carlo/molecular dynamics simulation of electron mobility in silicon with ordered dopant arrays
AU - Terunuma, T.
AU - Watanabe, T.
AU - Shinada, T.
AU - Ohdomari, I.
AU - Kamakura, Y.
AU - Taniguchi, K.
PY - 2008
Y1 - 2008
N2 - Electron transport in bulk silicon with ordered dopant arrays is studied using an ensemble Monte Carlo (EMC) technique coupled with molecular dynamics (MD) method. This work is motivated by a recently developed single-ion implantation (SII) technique, which enables us to fabricate a semiconductor device with an ordered dopant array. We numerically estimate the carrier mobility in silicon with such an ordered dopant array comparing to that with conventional random dopant distribution. The calculation results show that electron mobility can be enhanced in the ordered dopant array if the fluctuation of dopant position is less than 5 nm.
AB - Electron transport in bulk silicon with ordered dopant arrays is studied using an ensemble Monte Carlo (EMC) technique coupled with molecular dynamics (MD) method. This work is motivated by a recently developed single-ion implantation (SII) technique, which enables us to fabricate a semiconductor device with an ordered dopant array. We numerically estimate the carrier mobility in silicon with such an ordered dopant array comparing to that with conventional random dopant distribution. The calculation results show that electron mobility can be enhanced in the ordered dopant array if the fluctuation of dopant position is less than 5 nm.
KW - Coulomb scattering
KW - Electron mobility
KW - Ordered dopant arrays
KW - Single ion implantation
UR - http://www.scopus.com/inward/record.url?scp=67650348361&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=67650348361&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2008.4648229
DO - 10.1109/SISPAD.2008.4648229
M3 - Conference contribution
AN - SCOPUS:67650348361
SN - 9781424417537
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 251
EP - 254
BT - 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
Y2 - 9 September 2008 through 11 September 2008
ER -