Erratum: Oxidized Si terminated diamond and its MOSFET operation with SiO2gate insulator (Applied Physics Letters (2020) 116 (212103) DOI: 10.1063/1.5143982)

Wenxi Fei; Te Bi; Masayuki Iwataki; Shoichiro Imanishi; Hiroshi Kawarada

doi:10.1063/5.0017925

Erratum: Oxidized Si terminated diamond and its MOSFET operation with SiO₂gate insulator (Applied Physics Letters (2020) 116 (212103) DOI: 10.1063/1.5143982)

Wenxi Fei, Te Bi, Masayuki Iwataki, Shoichiro Imanishi, Hiroshi Kawarada^*

^*この研究の対応する著者

基幹理工学部

研究成果: Comment/debate › 査読

2 被引用数 (Scopus)

抄録

This article was originally published on 29May 2020 with an error in the equation on page 4. The equation is correct as it appears below. (Equation Presented) The online version of the article was corrected on 1 June 2020. AIP Publishing apologizes for this error.

本文言語	English
論文番号	269901
ジャーナル	Applied Physics Letters
巻	116
号	26
DOI	https://doi.org/10.1063/5.0017925
出版ステータス	Published - 2020 6月 29

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/5.0017925

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引用スタイル

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