Erratum: Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN (Applied Physics Letters (2014) 105 (193509))

Masanobu Hiroki; Kazuhide Kumakura; Yasuyuki Kobayashi; Tetsuya Akasaka; Toshiki Makimoto; Hideki Yamamoto

doi:10.1063/1.4906268

Erratum: Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN (Applied Physics Letters (2014) 105 (193509))

Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Toshiki Makimoto, Hideki Yamamoto

先進理工学部

研究成果: Comment/debate › 査読

本文言語	English
論文番号	049903
ジャーナル	Applied Physics Letters
巻	106
号	4
DOI	https://doi.org/10.1063/1.4906268
出版ステータス	Published - 2015 1月 26

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.4906268

他のファイルとリンク

引用スタイル

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