TY - JOUR
T1 - Excitonic polariton structures in Wurtzite GaN
AU - Torii, Kousuke
AU - Chichibu, Shigefusa F.
AU - Deguchi, Takahiro
AU - Nakanishi, Hisayuki
AU - Sota, Takayuki
AU - Nakamura, Shuji
N1 - Copyright:
Copyright 2007 Elsevier B.V., All rights reserved.
PY - 2001
Y1 - 2001
N2 - Reflectance, photoreflectance and photoluminescence spectra of GaN substrate prepared by lateral epitaxial overgrowth technique were measured at low temperature. All spectra were discussed based on model exciton-polariton picture, and the spectra were successfully explained by the model. Temperature dependence of transition energies was well described using a model that assume Einstein phonons.
AB - Reflectance, photoreflectance and photoluminescence spectra of GaN substrate prepared by lateral epitaxial overgrowth technique were measured at low temperature. All spectra were discussed based on model exciton-polariton picture, and the spectra were successfully explained by the model. Temperature dependence of transition energies was well described using a model that assume Einstein phonons.
KW - Excitonic polariton
KW - GaN
KW - Lateral epitaxial overgrowth
UR - http://www.scopus.com/inward/record.url?scp=0034972706&partnerID=8YFLogxK
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U2 - 10.1016/S0921-4526(01)00440-9
DO - 10.1016/S0921-4526(01)00440-9
M3 - Conference article
AN - SCOPUS:0034972706
SN - 0921-4526
VL - 302-303
SP - 268
EP - 276
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
T2 - Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors
Y2 - 24 September 2000 through 27 September 2000
ER -