抄録
Free-exciton and bound-exciton recombination radiation has been investigated for the characterization of crystal quality and dopants in natural high pressure synthetic and chemically vapour-deposited diamonds using cathodoluminescence. In the limited areas where the growth conditions are optimized, distinct emissions of free-exciton recombination have been observed even in polycrystalline diamond or in crystals formed in nitrogen-rich conditions. The emission is useful for local estimation of crystal purity. Bound-exciton recombination radiation reflects the acceptor concentration in homoepitaxial boron-doped films. The emissions are dominant in the range 1.8-5.5 eV.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 100-105 |
| ページ数 | 6 |
| ジャーナル | Diamond and Related Materials |
| 巻 | 2 |
| 号 | 2-4 |
| DOI | |
| 出版ステータス | Published - 1993 3月 31 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 化学 (全般)
- 機械工学
- 物理学および天文学（全般）
- 材料化学
- 電子工学および電気工学