Free-exciton and bound-exciton recombination radiation has been investigated for the characterization of crystal quality and dopants in natural high pressure synthetic and chemically vapour-deposited diamonds using cathodoluminescence. In the limited areas where the growth conditions are optimized, distinct emissions of free-exciton recombination have been observed even in polycrystalline diamond or in crystals formed in nitrogen-rich conditions. The emission is useful for local estimation of crystal purity. Bound-exciton recombination radiation reflects the acceptor concentration in homoepitaxial boron-doped films. The emissions are dominant in the range 1.8-5.5 eV.
ASJC Scopus subject areas
- 化学 (全般)