抄録
A procedure to extend the limit of proximity x-ray lithography (PXL) by changing the exposure methods is proposed. In particular, it is shown that PXL can be used at 25 nm and most probably 18 nm design rule by changing the exposure methods corresponding to the gap limit by steppers. The same light source and facility layout can be used throughout the full generations of PXL.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 2979-2983 |
| ページ数 | 5 |
| ジャーナル | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| 巻 | 20 |
| 号 | 6 |
| DOI | |
| 出版ステータス | Published - 2002 11月 |
ASJC Scopus subject areas
- 凝縮系物理学
- 電子工学および電気工学