Extremely high characteristic temperature T₀ of 0.98 μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

The authors investigate the incorporation of a GaAs/InGaP superlattice optical confinement layer (SL-OCL) in 0.98 μm InGaAs/InGaP strained quantum-well (QW) lasers. A theoretical study of the multiquantum barrier (MQB) effect of the GaAs/InGaP SL indicates that electrons in the GaAs OCL `see' greater than two times the barrier height of the classical bulk barrier height. Experimentally, an extremely high characteristic temperature T₀ of 300 K around RT was obtained, which is mainly due to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.