Fabrication and characterization of Co-ferrite thin films for a ferromagnetic barrier in a spin-filtering device operating at room temperature

R. Goto; Y. K. Takahashi; N. Tezuka; K. Inomata; S. Sugimoto; K. Hono

doi:10.1109/TMAG.2007.893696

Fabrication and characterization of Co-ferrite thin films for a ferromagnetic barrier in a spin-filtering device operating at room temperature

R. Goto^*, Y. K. Takahashi, N. Tezuka, K. Inomata, S. Sugimoto, K. Hono

^*この研究の対応する著者

研究成果: Article › 査読

抄録

For development of a spin-filtering device with a ferromagnetic barrier, very thin Co-ferrite layers are prepared by the plasma oxidization of the CoFe₂ surface deposited on MgO(001) single crystal substrates and postannealing process. Spin-filtering junctions consisting of CoFe ₂/(MgO/)Co-ferrite/Ta are fabricated and exhibit nonlinear J-V curves. By the insertion of a MgO layer, clear independent rotation of two magnetic moments is observed.

本文言語	English
ページ（範囲）	2797-2799
ページ数	3
ジャーナル	IEEE Transactions on Magnetics
巻	43
号	6
DOI	https://doi.org/10.1109/TMAG.2007.893696
出版ステータス	Published - 2007 6月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

文献へのアクセス

10.1109/TMAG.2007.893696

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引用スタイル

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abstract = "For development of a spin-filtering device with a ferromagnetic barrier, very thin Co-ferrite layers are prepared by the plasma oxidization of the CoFe2 surface deposited on MgO(001) single crystal substrates and postannealing process. Spin-filtering junctions consisting of CoFe 2/(MgO/)Co-ferrite/Ta are fabricated and exhibit nonlinear J-V curves. By the insertion of a MgO layer, clear independent rotation of two magnetic moments is observed.",

keywords = "Co-ferrite, Spin-filtering devices, Spin-polarized current sources, Spintronics",

author = "R. Goto and Takahashi, {Y. K.} and N. Tezuka and K. Inomata and S. Sugimoto and K. Hono",

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AU - Goto, R.

AU - Takahashi, Y. K.

AU - Tezuka, N.

AU - Inomata, K.

AU - Sugimoto, S.

AU - Hono, K.

PY - 2007/6

Y1 - 2007/6

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AB - For development of a spin-filtering device with a ferromagnetic barrier, very thin Co-ferrite layers are prepared by the plasma oxidization of the CoFe2 surface deposited on MgO(001) single crystal substrates and postannealing process. Spin-filtering junctions consisting of CoFe 2/(MgO/)Co-ferrite/Ta are fabricated and exhibit nonlinear J-V curves. By the insertion of a MgO layer, clear independent rotation of two magnetic moments is observed.

KW - Co-ferrite

KW - Spin-filtering devices

KW - Spin-polarized current sources

KW - Spintronics

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