抄録
Chalcogenide amorphous semiconductor diodes were fabricated using low-temperature thermal diffusion techniques. Anomalous diffusion profiles of Cd ions were observed by secondary ion mass spectroscopy. Two opposite potential barriers were formed owing to a peculiar diffusion profile of Cd; thus, the rectifying effects became poor. A high density of vacancies and dislocation-like defects, especially in the surface region, is considered to cause anomalous diffusion profiles of Cd ions.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes |
| ページ | 1102-1106 |
| ページ数 | 5 |
| 巻 | 26 |
| 版 | 7 |
| 出版ステータス | Published - 1987 7月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）