Chalcogenide amorphous semiconductor diodes were fabricated using low-temperature thermal diffusion techniques. Anomalous diffusion profiles of Cd ions were observed by secondary ion mass spectroscopy. Two opposite potential barriers were formed owing to a peculiar diffusion profile of Cd; thus, the rectifying effects became poor. A high density of vacancies and dislocation-like defects, especially in the surface region, is considered to cause anomalous diffusion profiles of Cd ions.
|ホスト出版物のタイトル||Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes|
|出版ステータス||Published - 1987 7月|
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