Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition

Hiromitsu Kato; Tomohiro Nango; Takeshi Miyagawa; Takahiro Katagiri; Yoshimichi Ohki; Kwang Soo Seol; Makoto Takiyama

Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition

Hiromitsu Kato^*, Tomohiro Nango, Takeshi Miyagawa, Takahiro Katagiri, Yoshimichi Ohki, Kwang Soo Seol, Makoto Takiyama

^*この研究の対応する著者

先進理工学部

研究成果: Paper › 査読

3 被引用数 (Scopus)

抄録

Hafnium silicate was deposited by plasma-enhanced chemical vapor deposition (PECVD). The deposited films are silicate with Si-O and Hf-O bonds and no Si-Hf bonds were detected. The relative permittivity increased from 3 to 15 when the hafnium content increased from 0 to atomic % to 21 atomic %.

本文言語	English
ページ	483-486
ページ数	4
出版ステータス	Published - 2001 12月 1
イベント	Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems - Himeji, Japan 継続期間: 2001 11月 19 → 2001 11月 22

Conference

Conference	Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
国/地域	Japan
City	Himeji
Period	01/11/19 → 01/11/22

ASJC Scopus subject areas

工学（全般）
材料科学（全般）

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引用スタイル

Kato, H., Nango, T., Miyagawa, T., Katagiri, T., Ohki, Y., Seol, K. S., & Takiyama, M. (2001). Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition. 483-486. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition. / Kato, Hiromitsu; Nango, Tomohiro; Miyagawa, Takeshi その他.
2001. 483-486 Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

研究成果: Paper › 査読

Kato, H, Nango, T, Miyagawa, T, Katagiri, T, Ohki, Y, Seol, KS & Takiyama, M 2001, 'Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition', Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan, 01/11/19 - 01/11/22 pp. 483-486.

Kato H, Nango T, Miyagawa T, Katagiri T, Ohki Y, Seol KS その他. Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition. 2001. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Kato, Hiromitsu ; Nango, Tomohiro ; Miyagawa, Takeshi その他. / Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.4 p.

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abstract = "Hafnium silicate was deposited by plasma-enhanced chemical vapor deposition (PECVD). The deposited films are silicate with Si-O and Hf-O bonds and no Si-Hf bonds were detected. The relative permittivity increased from 3 to 15 when the hafnium content increased from 0 to atomic % to 21 atomic %.",

author = "Hiromitsu Kato and Tomohiro Nango and Takeshi Miyagawa and Takahiro Katagiri and Yoshimichi Ohki and Seol, {Kwang Soo} and Makoto Takiyama",

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AU - Ohki, Yoshimichi

AU - Seol, Kwang Soo

AU - Takiyama, Makoto

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N2 - Hafnium silicate was deposited by plasma-enhanced chemical vapor deposition (PECVD). The deposited films are silicate with Si-O and Hf-O bonds and no Si-Hf bonds were detected. The relative permittivity increased from 3 to 15 when the hafnium content increased from 0 to atomic % to 21 atomic %.

AB - Hafnium silicate was deposited by plasma-enhanced chemical vapor deposition (PECVD). The deposited films are silicate with Si-O and Hf-O bonds and no Si-Hf bonds were detected. The relative permittivity increased from 3 to 15 when the hafnium content increased from 0 to atomic % to 21 atomic %.

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Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition

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Conference

ASJC Scopus subject areas

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