Antireflection nanostructures for GaN light-emitting diodes (LEDs) were fabricated by reactive ion etching (RIE) using Ni as an etching mask. The Ni mask was formed by electrodeposition in combination with ultraviolet nanoimprint lithography (UVNIL). The antireflection nanostructures of 600 nm in depth, 300 nm in diameter, and 500 nm in pitch were fabricated on a GaN substrate. The radiant intensity of the LEDs was increased 1.5 times compared to that of a conventional LED. Since this method enables the fabrication of wafer-level GaN nanostructures with a low cost process, it is applicable to the fabrication of photonic crystals.
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