Fabrication of nano/microstructures in SiO2 and TiO2 by swift ions

K. Awazu; M. Fujimaki; S. Ishii; K. Shima; K. Nomura; Yoshimichi Ohki

doi:10.1109/IMNC.2002.1178547

Fabrication of nano/microstructures in SiO₂ and TiO₂ by swift ions

K. Awazu^*, M. Fujimaki, S. Ishii, K. Shima, K. Nomura, Yoshimichi Ohki

^*この研究の対応する著者

研究成果: Conference contribution

抄録

The authors introduce work on 2D and 3D nano/microfabrication with MeV ion beam irradiation on a-SiO₂ and rutile single crystal TiO₂. The electronic stopping of the ions is responsible for the track formation. The latent tracks atomic structure and enhanced etch rate are identified.

本文言語	English
ホスト出版物のタイトル	2002 International Microprocesses and Nanotechnology Conference, MNC 2002
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	68-69
ページ数	2
ISBN（印刷版）	4891140313, 9784891140311
DOI	https://doi.org/10.1109/IMNC.2002.1178547
出版ステータス	Published - 2002
イベント	International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan 継続期間: 2002 11月 6 → 2002 11月 8

Other

Other	International Microprocesses and Nanotechnology Conference, MNC 2002
国/地域	Japan
City	Tokyo
Period	02/11/6 → 02/11/8

ASJC Scopus subject areas

ハードウェアとアーキテクチャ
電子工学および電気工学

文献へのアクセス

10.1109/IMNC.2002.1178547

他のファイルとリンク

引用スタイル

Awazu, K, Fujimaki, M, Ishii, S, Shima, K, Nomura, K & Ohki, Y 2002, Fabrication of nano/microstructures in SiO₂ and TiO₂ by swift ions. in 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178547, Institute of Electrical and Electronics Engineers Inc., pp. 68-69, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, Japan, 02/11/6. https://doi.org/10.1109/IMNC.2002.1178547

@inproceedings{0035c75f890645e08fbbb154cb40df6c,

title = "Fabrication of nano/microstructures in SiO2 and TiO2 by swift ions",

abstract = "The authors introduce work on 2D and 3D nano/microfabrication with MeV ion beam irradiation on a-SiO2 and rutile single crystal TiO2. The electronic stopping of the ions is responsible for the track formation. The latent tracks atomic structure and enhanced etch rate are identified.",

author = "K. Awazu and M. Fujimaki and S. Ishii and K. Shima and K. Nomura and Yoshimichi Ohki",

year = "2002",

doi = "10.1109/IMNC.2002.1178547",

language = "English",

isbn = "4891140313",

pages = "68--69",

booktitle = "2002 International Microprocesses and Nanotechnology Conference, MNC 2002",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "International Microprocesses and Nanotechnology Conference, MNC 2002 ; Conference date: 06-11-2002 Through 08-11-2002",

}

TY - GEN

T1 - Fabrication of nano/microstructures in SiO2 and TiO2 by swift ions

AU - Awazu, K.

AU - Fujimaki, M.

AU - Ishii, S.

AU - Shima, K.

AU - Nomura, K.

AU - Ohki, Yoshimichi

PY - 2002

Y1 - 2002

N2 - The authors introduce work on 2D and 3D nano/microfabrication with MeV ion beam irradiation on a-SiO2 and rutile single crystal TiO2. The electronic stopping of the ions is responsible for the track formation. The latent tracks atomic structure and enhanced etch rate are identified.

AB - The authors introduce work on 2D and 3D nano/microfabrication with MeV ion beam irradiation on a-SiO2 and rutile single crystal TiO2. The electronic stopping of the ions is responsible for the track formation. The latent tracks atomic structure and enhanced etch rate are identified.

UR - http://www.scopus.com/inward/record.url?scp=84960390798&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84960390798&partnerID=8YFLogxK

U2 - 10.1109/IMNC.2002.1178547

DO - 10.1109/IMNC.2002.1178547

M3 - Conference contribution

AN - SCOPUS:84960390798

SN - 4891140313

SN - 9784891140311

SP - 68

EP - 69

BT - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Microprocesses and Nanotechnology Conference, MNC 2002

Y2 - 6 November 2002 through 8 November 2002

ER -