抄録
We have fabricated SiN films with stoichiometric composition by double tubed coaxial line type microwave plasma chemical vapor deposition and have discussed the effects of the microwave power on the film qualities.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | Transactions of the Institute of Electronics, Information and Communication Engineers, Section E ( |
| ページ | 334-335 |
| ページ数 | 2 |
| 巻 | E70 |
| 版 | 4 |
| 出版ステータス | Published - 1987 4月 |
| イベント | Pap from the 1987 Natl Conv IEICE - Tokyo, Jpn 継続期間: 1987 3月 26 → 1987 3月 29 |
Other
| Other | Pap from the 1987 Natl Conv IEICE |
|---|---|
| City | Tokyo, Jpn |
| Period | 87/3/26 → 87/3/29 |
ASJC Scopus subject areas
- 工学（全般）