Fabrication of T-shaped gate diamond metal-insulator-semiconductor field-effect transistors

Kazuyuki Hirama; Shingo Miyamoto; Hiroki Matsudaira; Hitoshi Umezawa; Hiroshi Kawarada

doi:10.1143/JJAP.45.5681

Fabrication of T-shaped gate diamond metal-insulator-semiconductor field-effect transistors

Kazuyuki Hirama, Shingo Miyamoto, Hiroki Matsudaira, Hitoshi Umezawa, Hiroshi Kawarada^*

^*この研究の対応する著者

基幹理工学部

研究成果: Article › 査読

10 被引用数 (Scopus)

抄録

Diamond metal-insulator-semiconductor field effect transistors (MISFETs) with gates of 0.2-0.9 urn length and T-shape were realized by trilayer resist electron-beam lithography. FETs show a cut-off frequency (f_T) of 11 GHz and maximum oscillation frequency (f_max) of 22 GHz. The f _max/f_T ratio of this FET was more than double that of FETs with a conventional gate structure and the same gate length. The f_T of 11 GHz was half the maximum for diamond FETs due to parasitic capacitance at the gate-drain and gate-source electrodes. The T-shaped gate structure and the source-to-drain spacing must be optimized to reduce parasitic capacitance between each electrode.

本文言語	English
ページ（範囲）	5681-5684
ページ数	4
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	45
号	7
DOI	https://doi.org/10.1143/JJAP.45.5681
出版ステータス	Published - 2006 7月 7

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/JJAP.45.5681

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title = "Fabrication of T-shaped gate diamond metal-insulator-semiconductor field-effect transistors",

abstract = "Diamond metal-insulator-semiconductor field effect transistors (MISFETs) with gates of 0.2-0.9 urn length and T-shape were realized by trilayer resist electron-beam lithography. FETs show a cut-off frequency (fT) of 11 GHz and maximum oscillation frequency (fmax) of 22 GHz. The f max/fT ratio of this FET was more than double that of FETs with a conventional gate structure and the same gate length. The fT of 11 GHz was half the maximum for diamond FETs due to parasitic capacitance at the gate-drain and gate-source electrodes. The T-shaped gate structure and the source-to-drain spacing must be optimized to reduce parasitic capacitance between each electrode.",

keywords = "Diamond, Field effect transistor, Hydrogen-terminated surface conductive layer, Maximum frequency of oscillation, Parasitic components, T-shaped gate structure",

author = "Kazuyuki Hirama and Shingo Miyamoto and Hiroki Matsudaira and Hitoshi Umezawa and Hiroshi Kawarada",

year = "2006",

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AU - Hirama, Kazuyuki

AU - Miyamoto, Shingo

AU - Matsudaira, Hiroki

AU - Umezawa, Hitoshi

AU - Kawarada, Hiroshi

PY - 2006/7/7

Y1 - 2006/7/7

N2 - Diamond metal-insulator-semiconductor field effect transistors (MISFETs) with gates of 0.2-0.9 urn length and T-shape were realized by trilayer resist electron-beam lithography. FETs show a cut-off frequency (fT) of 11 GHz and maximum oscillation frequency (fmax) of 22 GHz. The f max/fT ratio of this FET was more than double that of FETs with a conventional gate structure and the same gate length. The fT of 11 GHz was half the maximum for diamond FETs due to parasitic capacitance at the gate-drain and gate-source electrodes. The T-shaped gate structure and the source-to-drain spacing must be optimized to reduce parasitic capacitance between each electrode.

AB - Diamond metal-insulator-semiconductor field effect transistors (MISFETs) with gates of 0.2-0.9 urn length and T-shape were realized by trilayer resist electron-beam lithography. FETs show a cut-off frequency (fT) of 11 GHz and maximum oscillation frequency (fmax) of 22 GHz. The f max/fT ratio of this FET was more than double that of FETs with a conventional gate structure and the same gate length. The fT of 11 GHz was half the maximum for diamond FETs due to parasitic capacitance at the gate-drain and gate-source electrodes. The T-shaped gate structure and the source-to-drain spacing must be optimized to reduce parasitic capacitance between each electrode.

KW - Diamond

KW - Field effect transistor

KW - Hydrogen-terminated surface conductive layer

KW - Maximum frequency of oscillation

KW - Parasitic components

KW - T-shaped gate structure

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Fabrication of T-shaped gate diamond metal-insulator-semiconductor field-effect transistors

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