We have demonstrated the possibility of growing p-type ZnO films by a pulsed laser deposition technique combined with plasma gas source. The p-type ZnO film has been fabricated by passing N2O gas through an electron cyclotron resonance (ECR) or RF plasma source. N2O gas is effective to prevent "O" vacancy from occurring and introduce "N" as an acceptor, at the same time. With Ga and N codoping technique, we have observed a room temperature resistivity of 0.5 Ñ cm and a carrier concentration of 5 × 1019 cm-3 in ZnO film on glass substrate. Two-step growth, with a thin ZnO template layer formed at high temperature, is quite effective to realize a well crystallized growth at low temperature. The observed p-type ZnO films will open the door for practical applications in various oxide electronic devices.
|ジャーナル||Physica B: Condensed Matter|
|出版ステータス||Published - 2001|
|イベント||Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors - Awaji Island, Hyogo, Japan|
継続期間: 2000 9月 24 → 2000 9月 27
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