Femtosecond saturable absorption recovery in a type-II tunneling Bi-quantum well for long-wavelength operation

Y. Matsui*, K. Ogawa, A. Tackeuchi, Y. Ogawa, A. Suzuki

*この研究の対応する著者

研究成果: Article査読

抄録

We demonstrate femtosecond bleached absorption recovery using a type-II tunneling biquantum well (TBQ) structure tailored for long-wavelength operation. The type-II TBQ structure consisted of strained-layer InGaAlAs narrow wells and InGaAsP wide wells with staggered band lineup, separated by thin InAlAs barriers. In the structures, the photocreated electrons in InGaAlAs layers energetically relax to InGaAsP layers via LO-phonon assisted tunneling through InAlAs barrier, resulting in the bleaching recovery due to the ultrafast spatial separation of electrons and holes. The bleached absorption recovery time was as fast as 350 fs in the excitation wavelength range of 50 nm near the InGaAlAs bandgap.

本文言語English
ページ(範囲)416-419
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
204
1
DOI
出版ステータスPublished - 1997 11月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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