Field-emission-display basic structure using Si-doped AlN

Yoshitaka Taniyasu; Makoto Kasu; Toshiki Makimoto; Naoki Kobayashi

doi:10.1109/IVMC.2003.1223077

Field-emission-display basic structure using Si-doped AlN

Yoshitaka Taniyasu^*, Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

^*この研究の対応する著者

研究成果: Conference contribution

1 被引用数 (Scopus)

本文言語	English
ホスト出版物のタイトル	Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003
編集者	Mikio Takai, Junzo Ishikawa, Yasuhito Gotoh
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	249-250
ページ数	2
ISBN（電子版）	4818195154, 9784818195158
DOI	https://doi.org/10.1109/IVMC.2003.1223077
出版ステータス	Published - 2003 1月 1
外部発表	はい
イベント	16th International Vacuum Microelectronics Conference, IVMC 2003 - Toyonaka, Osaka, Japan 継続期間: 2003 7月 7 → 2003 7月 11

出版物シリーズ

名前	Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
巻	2003-January

Other

Other	16th International Vacuum Microelectronics Conference, IVMC 2003
国/地域	Japan
City	Toyonaka, Osaka
Period	03/7/7 → 03/7/11

ASJC Scopus subject areas

電子工学および電気工学
凝縮系物理学
電子材料、光学材料、および磁性材料

文献へのアクセス

10.1109/IVMC.2003.1223077

他のファイルとリンク

引用スタイル

Taniyasu, Y., Kasu, M., Makimoto, T., & Kobayashi, N. (2003). Field-emission-display basic structure using Si-doped AlN. In M. Takai, J. Ishikawa, & Y. Gotoh (Eds.), Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003 (pp. 249-250). [1223077] (Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVMC.2003.1223077

Field-emission-display basic structure using Si-doped AlN. / Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki その他.
Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003. ed. / Mikio Takai; Junzo Ishikawa; Yasuhito Gotoh. Institute of Electrical and Electronics Engineers Inc., 2003. p. 249-250 1223077 (Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC; Vol. 2003-January).

研究成果: Conference contribution

Taniyasu, Y, Kasu, M, Makimoto, T & Kobayashi, N 2003, Field-emission-display basic structure using Si-doped AlN. in M Takai, J Ishikawa & Y Gotoh (eds), Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003., 1223077, Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 249-250, 16th International Vacuum Microelectronics Conference, IVMC 2003, Toyonaka, Osaka, Japan, 03/7/7. https://doi.org/10.1109/IVMC.2003.1223077

Taniyasu Y, Kasu M, Makimoto T, Kobayashi N. Field-emission-display basic structure using Si-doped AlN. In Takai M, Ishikawa J, Gotoh Y, editors, Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 249-250. 1223077. (Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC). doi: 10.1109/IVMC.2003.1223077

Taniyasu, Yoshitaka ; Kasu, Makoto ; Makimoto, Toshiki その他. / Field-emission-display basic structure using Si-doped AlN. Technical Digest of the 16th International Vacuum Microelectronics Conference, IVMC 2003. editor / Mikio Takai ; Junzo Ishikawa ; Yasuhito Gotoh. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 249-250 (Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC).

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