抄録
Field emission properties of single-walled carbon nanotubes (SWCNTs), which were prepared through alcohol catalytic chemical vapor deposition for 10-60s, were characterized in a diode configuration. Protrusive bundles at the top surface of samples act selectively as emission sites. The number of emission sites was controlled by emitter morphologies combined with texturing of Si substrates. SWCNTs grown on a textured Si substrate exhibited a turn-on field as low as 2.4 V/μm at a field emission current density of 1 μA/cm 2. Uniform spatial luminescence (0.5 cm2) from the rear surface of the anode was revealed for SWCNTs prepared on the textured Si substrate. Deterioration of field emission properties through repetitive measurements was reduced for the textured samples in comparison with vertically aligned SWCNTs and a random network of SWCNTs prepared on flat Si substrates. Emitter morphology resulting in improved field emission properties is a crucial factor for the fabrication of SWCNT-electron sources. Morphologically controlled SWCNTs with promising emitter performance are expected to be practical electron sources.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 4780-4787 |
| ページ数 | 8 |
| ジャーナル | Japanese journal of applied physics |
| 巻 | 47 |
| 号 | 6 PART 1 |
| DOI | |
| 出版ステータス | Published - 2008 6月 13 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）