抄録
To realize highly sensitive resonant IR sensors the control of mechanical properties of the p+ silicon film is essential. Microfocus Raman spectroscopy and Secondary Ion Mass Spectrometry were used to measure the stress and boron concentration profile in the p+ silicon film respectively. Measurements of bending in cantilevers, of transversal stress gradient and boron profile in the films were found as being consistent with each other. Prediction of mechanical properties of micromechanical structure can be realized by using these techniques. Fine tuning of the resonance frequency in the final, packaged device, was realized by using an electrostatically activated axial force.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | An Investigations of Micro Structures, Sensors, Actuators, Machines and Robotic Systems |
| 出版社 | Publ by IEEE |
| ページ | 245-250 |
| ページ数 | 6 |
| ISBN（印刷版） | 078031834X |
| 出版ステータス | Published - 1994 |
| 外部発表 | はい |
| イベント | Proceedings of the IEEE Micro Electro Mechanical Systems - Oiso, Jpn 継続期間: 1994 1月 25 → 1994 1月 28 |
Other
| Other | Proceedings of the IEEE Micro Electro Mechanical Systems |
|---|---|
| City | Oiso, Jpn |
| Period | 94/1/25 → 94/1/28 |
ASJC Scopus subject areas
- 制御およびシステム工学
- 機械工学
- 電子工学および電気工学