@article{ebc4e38ee8fe498387ee297568ec5e32,
title = "First principles and macroscopic theories of semiconductor epitaxial growth",
abstract = "We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov islands and the misfit dislocations. This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic informations. The critical thickness of InAs/GaAs(1 1 0) heteroepitaxy obtained by this procedure is in good agreement with the scanning tunneling microscopy (STM) observations.",
keywords = "A1. Defects, A1. Growth models, A1. Stresses, A3. Molecular beam epitaxy",
author = "Kenji Shiraishi and Norihisa Oyama and Ko Okajima and Nori Miyagishima and Kyozaburo Takeda and Hiroshi Yamaguchi and Tomonori Ito and Takahisa Ohno",
note = "Funding Information: We would like to thank Professor K. Nakajima and Professor H. Nakayama for their stimulating discussions. We also thank Dr. K. Murase and Dr. Y. Takahashi for their useful advice. This work was partly supported by JSPS under Contract No. RFT96P00203 and the Grant-in-Aid for Scientific Research by the Ministry of Education, Science and Culture of Japan and the NEDO International Joint Research Grant.",
year = "2002",
month = apr,
doi = "10.1016/S0022-0248(01)01903-0",
language = "English",
volume = "237-239",
pages = "206--211",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier B.V.",
number = "1 4 I",
}